Fan-out interconnect structure and methods forming the same

ABSTRACT

A method includes forming an adhesive layer over a carrier, forming a sacrificial layer over the adhesive layer, forming through-vias over the sacrificial layer, and placing a device die over the sacrificial layer. The Method further includes molding and planarizing the device die and the through-vias, de-bonding the carrier by removing the adhesive layer, and removing the sacrificial layer.

BACKGROUND

The fabrication of modern circuits typically involves several steps.Integrated circuits are first fabricated on a semiconductor wafer, whichcontains multiple duplicated semiconductor chips, each comprisingintegrated circuits. The semiconductor chips are then sawed from thewafer and packaged. The packaging processes have two main purposes: toprotect delicate semiconductor chips and connect interior integratedcircuits to exterior pins.

With the increasing demand for more functions, Package-on-Package (PoP)technology, in which two or more packages are bonded in order to expandthe integration ability of the packages, was developed. With a highdegree of integration, the electrical performance of the resulting PoPpackage can be improved benefiting from the shortened connecting pathsbetween components. By using the PoP technology, package design becomesmore flexible and less complex. Time-to-market is also reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 12 illustrate the cross-sectional views of intermediatestages in the formation of a package in accordance with someembodiments;

FIGS. 13 through 23 illustrate the cross-sectional views of intermediatestages in the formation of a package in accordance with alternativeembodiments; and

FIG. 24 illustrates a process flow for forming a package in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A fan-out package and the method of forming the package are provided inaccordance with various exemplary embodiments. The variations of theembodiments are discussed. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.

FIGS. 1 through 23 illustrate the cross-sectional views of intermediatestages in the formation a package in accordance with some embodiments.The steps shown in FIGS. 1 through 23 are also illustrated schematicallyin the process flow 200 shown in FIG. 24. In the subsequent discussion,the process steps shown in FIGS. 1 through 23 are discussed referring tothe process steps in FIG. 24.

Referring to FIG. 1, carrier 30 is provided, and adhesive layer 32 isdisposed over carrier 30. Carrier 30 may be a blank glass carrier, ablank ceramic carrier, or the like, and may have a shape of asemiconductor wafer with a round top-view shape. Carrier 30 is sometimesreferred to as a carrier wafer. Adhesive layer 32 may be formed of aLight-to-Heat Conversion (LTHC) material, for example, although othertypes of adhesives may be used. In accordance with some embodiments ofthe present disclosure, adhesive layer 32 has the function ofdecomposing under the heat of light, and hence can release carrier 30from the structure formed thereon.

Sacrificial layer 34 is then formed over adhesive layer 32. Therespective step is shown as step 202 in the process flow shown in FIG.24. Sacrificial layer 34 has the function of protecting adhesive layer32. The material of sacrificial layer 34 is selected to be resistive tothe chemicals used in subsequent processes shown in FIGS. 2 through 7.Furthermore, sacrificial layer 34 is dense enough, so that the chemicalsused in the processes shown in FIGS. 2 through 7 do not penetratethrough sacrificial layer 34 to damage adhesive layer 32. In accordancewith some embodiments of the present disclosure, sacrificial layer 34 isan organic layer formed of an organic material such ashexamethyldisilance (HMDS). In some exemplary embodiments, the formationof sacrificial layer 34 includes placing carrier 30 in a chamber, andconducting HMDS gas into the chamber. The pressure of the HMDS gas maybe one atmosphere, or may be higher or lower than one atmosphere. Thetemperature of carrier 30 may be in the range between about 100° C. andabout 150° C. The bonds of the HMDS gas connect with the surface bondsof the underlying adhesive layer 32 to form sacrificial layer 34. Forexample, with adhesive layer 32 being an LTHC layer, the HMDS gas formbonds with the OH functional groups of the LTHC layer to form adhesivelayer 32. The resulting LTHC layer may be as thin as one or two (orslightly more, such as fewer than five) mono layers. The formation timemay be in the range between about 2 minutes and about 5 minutes.Accordingly, thickness T1 of LTHC layer 34 may be in the range fromseveral angstroms to about 20 angstroms.

In accordance with alternative embodiments of the present disclosure,sacrificial layer 34 is a metal layer such as a titanium layer. Anadvantageous feature of using titanium to form sacrificial layer 34 isthat in subsequent process steps, an etching process may be omittedsince the sacrificial layer 34, when formed of titanium, may be removedsimultaneously with the removal of the titanium layer in subsequentlyformed metal seed layer. In these embodiments, sacrificial layer 34 maybe formed using Physical Vapor Deposition (PVD), such as sputtering.

In accordance with yet alternative embodiments of the presentdisclosure, sacrificial layer 34 is an in inorganic dielectric layersuch as an oxide layer, which may be a silicon dioxide layer. In theseembodiments, sacrificial layer 34 may be formed using Chemical VaporDeposition (CVD), Plasma Enhance Chemical Vapor Deposition (PECVD), orother applicable methods.

Referring to FIG. 2, dielectric layer 36 is formed over sacrificiallayer 34. The respective step is shown as step 204 in the process flowshown in FIG. 24. Step 204 is illustrated as dashed since in someembodiments, such as the embodiments shown in FIGS. 13 through 23,dielectric layer 36 is not formed. The bottom surface of dielectriclayer 36 is in contact with the top surfaces of sacrificial layer 34. Inaccordance with some embodiments of the present disclosure, dielectriclayer 36 is formed of a polymer, which may be a photo-sensitive polymersuch as polybenzoxazole (PBO), polyimide, or the like. In alternativeembodiments, dielectric layer 36 is formed of a nitride such as siliconnitride, an oxide such as silicon oxide, PhosphoSilicate Glass (PSG),BoroSilicate Glass (BSG), Boron-doped PhosphoSilicate Glass (BPSG), orthe like. Dielectric layer 36 is then patterned to form openings 38therein. Hence, sacrificial layer 34 is exposed through openings 38 indielectric layer 36.

Referring to FIG. 3, seed layer 40 is formed over sacrificial layer 34,for example, through PVD. The respective step is shown as step 206 inthe process flow shown in FIG. 24. Seed layer 40 may be a metal seedlayer comprising copper, aluminum, titanium, or multi-layers thereof. Insome embodiments, seed layer 40 comprises a first metal layer such as atitanium layer (not shown) and a copper layer (not shown in FIG. 3,refer to FIG. 14) over the titanium layer. In these embodiments, seedlayer 40 has some portions in contact with sacrificial layer 34. Inalternative embodiments, seed layer 40 includes a single copper layer.

FIGS. 4 through 7 illustrate the formation of through-vias. Therespective step is shown as step 208 in the process flow shown in FIG.24. As shown in FIG. 4, photo resist 42 is applied over seed layer 40and is then patterned. In accordance with some embodiments of thepresent disclosure, photo resist 42 is a dry film, which is laminatedonto metal seed layer 40. In accordance with alternative embodiments,photo resist 42 is formed by spin coating. As a result of the patterning(exposure and developing), openings 44 are formed in photo resist 42,through which some portions of seed layer 40 are exposed.

As shown in FIG. 5, through-vias 46 are formed in openings 44 throughplating, which may be electro plating or electro-less plating.Through-vias 46 are plated on the exposed portions of seed layer 40.Through-vias 46 are conductive, and may be metal vias including copper,aluminum, tungsten, nickel, or alloys thereof. The top-view shapes ofthrough-vias 46 include, and are not limited to, rectangles, squares,circles, and the like. The heights of through-vias 46 are determined bythe thickness of the subsequently placed device die 48 (FIG. 8), withthe heights of through-vias 46 slightly greater than or equal to thethicknesses of device die 48 in various embodiments.

After the plating of through-vias 46, photo resist 42 is removed, andthe resulting structure is shown in FIG. 6. As a result, the portions ofseed layer 40 that are covered by photo resist 42 are exposed. Next, asshown in FIG. 7, an etching step is performed to remove the exposedportions of seed layer 40, wherein the etching may be an anisotropic orisotropic etching. The respective step is shown as step 210 in theprocess flow shown in FIG. 24. The portions of seed layer 40 that areoverlapped by through-vias 46, on the other hand, remain not etched.Throughout the description, the remaining underlying portions of seedlayer 40 are referred to as the bottom portions of through-vias 46.Although seed layer 40 is shown as having distinguishable interfaceswith the overlying portions of through-vias 46, when seed layer 40 isformed of a material similar to or the same as that of the respectiveoverlying through-vias 46, seed layer 40 may be merged with through-vias46 with no distinguishable interface therebetween. For example, thecopper layer in seed layer 40 may be merged with through-vias 46 with nodistinguishable interface. In alternative embodiments, there existdistinguishable interfaces between seed layer 40 and the overlyingplated portions of through-vias 46. For example, the titanium layer inseed layer 40 may be distinguished from the copper-containingthrough-vias 46. As a result of the etching of seed layer 40, dielectriclayer 36 is exposed.

As shown in FIGS. 2 through 7, there is a plurality of processesperformed during the existence of adhesive layer 32, which may be anLTHC layer. These processes include, for example, the patterning ofdielectric layer 36, the developing of photo resist 42, the removal ofphoto resist 42, the etching of seed layer 40, and the correspondingcleaning processes subsequent to these processes. Adhesive layer 32 maybe prone to the damage of the chemicals used in these processes if it isexposed to the chemicals. If adhesive layer 32 is damaged, in thede-bonding process as shown in FIGS. 9 and 10, it is difficult tode-bonding package 62 (FIG. 9) from carrier 30, and package 62 may bedamaged. Advantageously, in accordance with the embodiments of thepresent disclosure, sacrificial layer 34 is used to block the chemicalsfrom reaching adhesive layer 32 in the processes shown in FIGS. 2through 7, and adhesive layer 32 is protected from the damage.

FIG. 8 illustrates the placement of device die 48 over sacrificial layer34. The respective step is shown as step 212 in the process flow shownin FIG. 24. Device die 48 may be adhered to dielectric layer 36 throughdie attach film 50. Although FIG. 8 illustrates the placement of asingle device die 48, a plurality of device dies 48 may be placed overdielectric layer 36, wherein the plurality of placed device dies 48 maybe arranged as an array including a plurality of rows and a plurality ofcolumns.

Also referring to FIG. 8, molding material 52 is molded on device die 48and through-vias 46. The respective step is shown as step 214 in theprocess flow shown in FIG. 24. Molding material 52 is dispensed as afluid and is then cured. Molding material 52 fills the gaps betweendevice die 48 and through-vias 46, and may be in contact with dielectriclayer 36. Molding material 52 may include a molding compound, a moldingunderfill, an epoxy, or a resin. After the molding process, the topsurface of molding material 52 is higher than the top ends of metalpillars 54 and through-vias 46.

Next, a planarization step such as a Chemical Mechanical Polish (CMP)step or a grinding step is performed to thin molding material 52, untilthrough-vias 46 are exposed. The respective step is also shown as step214 in the process flow shown in FIG. 24. Metal pillars 54 of device die48 are thus exposed as a result of the planarization. Metal pillars 54are electrically coupled to the integrated circuits inside device die48. Due to the planarization, the top surfaces of through-vias 46 aresubstantially level (coplanar) with the top surfaces of metal pillars54, and are substantially level (coplanar) with the top surface ofmolding material 52.

Referring to FIG. 9, one or more layers of dielectric layers 56 and therespective Redistribution Lines (RDLs) 58 are formed over moldingmaterial 52, through-vias 46, and metal pillars 54. The respective stepis shown as step 216 in the process flow shown in FIG. 24. RDLs 58 arereferred to as front side RDLs since they are on the front side ofdevice die 48. In accordance with some embodiments of the presentdisclosure, dielectric layers 56 are formed of a polymer(s) such as PBO,polyimide, or the like. In accordance with alternative embodiments ofthe present disclosure, dielectric layers 56 are formed of an inorganicdielectric material such as silicon nitride, silicon oxide, siliconoxynitride, or the like.

Redistribution Lines (RDLs) 58 are formed to electrically couple tometal pillars 54 and through-vias 46. RDLs 58 may also interconnectmetal pillars 54 and through-vias 46. RDLs 58 may include metal traces(metal lines) and vias underlying and connected to the metal traces. Inaccordance with some embodiments of the present disclosure, RDLs 58 areformed through plating processes, wherein each of RDLs 58 includes aseed layer (not shown) and a plated metallic material over the seedlayer. The seed layer and the plated metallic material may be formed ofthe same material or different materials.

FIG. 9 also illustrates the formation of electrical connectors 60 inaccordance with some exemplary embodiments. Electrical connectors 60 areelectrically coupled to RDLs 58, metal pillars 54, and/or through-vias46. The formation of electrical connectors 60 may include placing solderballs over RDLs 58 and then reflowing the solder balls. In accordancewith alternative embodiments, the formation of electrical connectors 60includes performing a plating step to form solder regions over RDLs 58and then reflowing the solder regions. Electrical connectors 60 may alsoinclude metal pillars, or metal pillars and solder caps, which may alsobe formed through plating. Throughout the description, the combinedstructure including device die 48, through-vias 46, molding material 52,RDLs 58, and dielectric layers 56 will be referred to as package 62,which may be a composite wafer including a plurality of device dies 48.

FIG. 9 illustrates two RDL layers 58. In accordance with alternativeembodiments, there may be a single layer of RDLs 58 or more than twolayers of RDLs 58, depending on the routing requirement of therespective package. In accordance with yet alternative embodiments ofthe present disclosure, there are no RDLs, and electrically connectors60 are formed directly over through-vias 46 and metal pillars 54, withno RDLs between connectors 60 and the underlying through-vias 46 as wellas metal pillars 54.

Next, package 62 is de-bonded from carrier 30, and is then sawed apartin a die-saw step. In some exemplary de-boding process, dicing tape 64(FIG. 10) is attached to package 62 to protect electrical connectors 60,wherein dicing tape 64 is fixed by dicing frame 66. The de-bonding isperformed, for example, by projecting a UV light or a laser on adhesivelayer 32 (FIG. 9). For example, when adhesive layer 32 is formed ofLTHC, the heat generated from the light or laser causes the LTHC to bedecomposed, and hence carrier 30 is detached from package 62. Theresulting structure is shown in FIG. 10.

FIG. 10 illustrates the resulting structure after the de-bonding ofcarrier 30. Sacrificial layer 34 may remain or may be removed as aresult of the de-bonding process, depending on the material ofsacrificial layer 34. Accordingly, sacrificial layer 34 is illustratedusing dashed lines. In the embodiments wherein sacrificial layer 34 isformed of HMDS, since HMDS is very thin, it may be removed (and may beremoved entirely) along with the decomposed adhesive layer 32, and noadditional process is needed to remove sacrificial layer 34.

If sacrificial layer 34 remains after the de-bonding, an etching processis performed to remove sacrificial layer 34, which will be removedentirely. The respective step is shown as step 218 in the process flowshown in FIG. 24. In the embodiments wherein sacrificial layer 34 isformed of titanium or an inorganic dielectric material such as siliconoxide, sacrificial layer 34 may be removed along with the titanium layerin the remaining portions of seed layer 40. For example, HydrogenFluoride (HF) gas or a diluted HF solution may be used to etchsacrificial layer 34 that is formed of titanium or silicon oxide. Inaddition, the titanium layer in seed layer 40 is also removed in thesame etching process. The copper in metal seed layer 40 is exposed, andhence the subsequently formed backside RDLs or electrical connectorssuch as solder regions may be formed thereon. The resulting structure isshown in FIG. 11.

In FIG. 11, the top portions of seed layer 40 is illustrated as beingremoved entirely from the top surfaces of through-vias 46, although thecopper layer in the top portions of metal seed layer 40 may actuallyremain on the top surfaces of through-vias 46. The copper layer of seedlayer 40 may also be removed from the top surfaces of through-vias 46due to the over-etching occurring in the etching of sacrificial layer34.

FIG. 12 illustrates the formation of backside RDLs and/or the electricalconnectors in accordance with some exemplary embodiments. The respectivestep is shown as step 220 in the process flow shown in FIG. 24.Dielectric layers 70 and RDLs 72 are formed on the backside of devicedie 48, with RDLs 72 electrically coupled to through-vias 46. Inaccordance with some embodiments of the present disclosure, there is asingle backside RDL layer. In accordance with alternative embodiments,as illustrated in FIG. 12, the illustrated RDLs 72 represent more thanone RDL layer, wherein vias are formed to interconnect the differentmetal traces in different RDL layers. Dielectric layers 70 may also beformed of a polymer such as PBO, BCB, polyimide, or an inorganicmaterial such as silicon oxide, silicon nitride, silicon oxynitride, orthe like. Electrical connectors 74 may also be solder regions, metalpillars with solder caps, or the like.

In subsequent steps, package 62 is sawed apart into a plurality ofpackages, each including one of device dies 48 and the correspondingthrough-vias 46. The packages may then be bonded to other packagecomponent to form PoP packages.

FIGS. 13 through 23 illustrate cross-sectional views of intermediatestages in the formation of a fan-out package in accordance withalternative embodiments. Unless specified otherwise, the materials andthe formation methods of the components in these embodiments areessentially the same as the like components, which are denoted by likereference numerals in the embodiments shown in FIGS. 1 through 12. Thedetails regarding the formation process and the materials of thecomponents shown in FIGS. 13 through 23 may thus be found in thediscussion of the embodiment shown in FIGS. 1 through 12.

Referring to FIG. 13, adhesive layer 32 is formed on carrier 30,followed by the formation of sacrificial layer 34 over adhesive layer32. Sacrificial layer 34 may be formed of HMDS in accordance with someembodiments. The formation of the HMDS may be essentially the same as inthe embodiments shown in FIG. 1, and hence is not repeated herein.Accordingly, sacrificial layer 34 may be a couple of mono layers thickin accordance with some exemplary embodiments.

Next, referring to FIG. 14, metal seed layer 40 is formed oversacrificial layer 34, with an entirety the bottom surface of metal seedlayer 40 in contact with the top surface of sacrificial layer 34. Inaccordance with some embodiments, seed layer 40 includes metal layer 40Aand copper layer 40B over the metal layer 40A. Metal layer 40A andcopper layer 40B include different metals and/or have differentcompositions, wherein metal layer 40A may or may not include coppertherein. In some exemplary embodiments, metal layer 40A is formed of anon-copper metal such as titanium. Accordingly, metal layer 40A isreferred to as titanium layer 40A, while it can also be formed of othernon-copper metals. The titanium layer is in contact with sacrificiallayer 34. Seed layer 40 is planar, with both the top surface and thebottom surface being planar in these embodiments.

Next, referring to FIG. 15, photo resist 42 is formed over seed layer40, and is then patterned, so that some portions of seed layer 40 areexposed through openings 44 in photo resist 42. FIG. 16 illustrates theformation of through-vias 46, for example, through plating. Next, photoresist 42 is removed, and the portions of metal seed layer 40 underlyingthe removed photo resist 42 are exposed. The resulting structure isshown in FIG. 17.

FIG. 17 illustrates the removal of the copper layer 40B in seed layer40, wherein the removed copper portions 40B are illustrated using dashedlines. The portions of the copper layer 40B overlapped by through-vias46 are merged with the overlying through-vias 46, and hence are notillustrated separately. After the removal of copper portions 40B,titanium layer 40A in seed layer 40 is exposed, and may be leftun-etched until later steps, as shown in FIG. 18.

In the steps shown in FIGS. 15 through 18, sacrificial layer 34 preventsthe chemicals used in these process steps from reaching adhesive layer32. Although sacrificial layer 34 may be thin, it is resistant to thechemicals. Furthermore, sacrificial layer 34 is a dense layer, and hencethe chemicals are not able to penetrate through sacrificial layer 34 toreach adhesive layer 32.

FIG. 19 illustrates the placement of device die 48, and the molding ofthrough-vias 46 and device die 48 in molding material 52. Aplanarization is then performed to expose metal pillars 54 andthrough-vias 46, wherein the top surfaces of metal pillars 54,through-vias 46, and molding material 52 are level with each other. Insubsequent steps, as shown in FIG. 20, portions of package 62 includingdielectric layers 56, RDLs 58, and electrical connectors 60 are formed.

Package 62 is then de-bonded from carrier 30. In some exemplaryde-boding process, dicing tape 64 (FIG. 21) is attached to package 62 toprotect electrical connectors 60, wherein dicing tape 64 is fixed bydicing frame 66. The de-bonding is performed, for example, by projectinga UV light or a laser on adhesive layer 32 (FIG. 20). For example, whenadhesive layer 32 is formed of LTHC, the heat generated from the lightor laser causes the LTHC to decompose, and hence carrier 30 is detachedfrom package 62. Since sacrificial layer 34 is very thin, sacrificiallayer 34 is also removed from package 62 as a result of the de-bonding.The resulting structure is shown in FIG. 10, wherein sacrificial layer34 as shown in FIG. 20 is no longer illustrated.

As shown in FIG. 21, layer 40A in metal seed layer is left over devicedie 48, through-vias 46, and molding material 52. Furthermore, the topsurface and the bottom surface of seed layer 40A may be planar. Next, anetching step is performed, so that layer 40A is removed, and theresulting structure is shown in FIG. 22. In some exemplary embodiments,layer 40A is etched in a dry etching step, wherein HF gas may be used.As a result, through-vias 46, die attach film 50, and molding material52 are exposed.

In subsequent process steps, as shown in FIG. 23, dielectric layers 70,RDLs 72, and electrical connectors 74 are formed. Package 62 may besawed part into a plurality of packages, which may be bonded to otherpackage components to form PoP packages.

The embodiments of the present disclosure have some advantageousfeatures. By using the sacrificial layer to protect the adhesive layersuch as the LTHC, the adhesive layer is not damaged in the packagingprocess, and hence it can function properly during the de-bonding ofcarrier. Accordingly, in the de-bonding process, the package formed onthe sacrificial layer is not damaged.

In accordance with some embodiments of the present disclosure, a methodincludes forming an adhesive layer over a carrier, forming a sacrificiallayer over the adhesive layer, forming through-vias over the sacrificiallayer, and placing a device die over the sacrificial layer. The Methodfurther includes molding and planarizing the device die and thethrough-vias, de-bonding the carrier by removing the adhesive layer, andremoving the sacrificial layer.

In accordance with alternative embodiments of the present disclosure, amethod includes forming an LTHC layer over a carrier, forming asacrificial layer over the LTHC layer, forming a metal seed layer overthe sacrificial layer, plating through-vias over the metal seed layer,and etching portions of the metal seed layer un-covered by thethrough-vias. A device die is placed over the sacrificial layer. Thedevice die and the through-vias are then molded in a molding materialand planarized, wherein conductive features at a surface of the devicedie and the through-vias are exposed through the molding material. Thecarrier is then de-bonded by projecting a light to the LTHC layer todecompose the LTHC layer. The sacrificial layer is then removed.

In accordance with yet alternative embodiments of the presentdisclosure, a method includes forming an adhesive layer over a carrier,sputtering a first titanium layer over the adhesive layer, and formingand patterning a polymer layer over the first titanium layer, withportions of the first titanium layer exposed through the polymer layer.The method further includes forming a metal seed layer, which includesfirst portions over the polymer layer, and second portions extendinginto openings in the polymer layer to contact the first titanium layer.The metal seed layer includes a second titanium layer contacting thefirst titanium layer, and a copper layer over the second titanium layer.Through-vias are plated over the metal seed layer. Some portions of thecopper layer and the second titanium layer un-covered by thethrough-vias are then etched. A device die is placed over the polymerlayer. The method further includes molding the device die and thethrough-vias in a molding material and planarizing the device die andthe through-vias, de-bonding the carrier to remove the adhesive layerand the carrier from the first titanium layer, and etching to remove anentirety of the first titanium layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming an adhesive layerover a carrier; forming a blanket layer as a sacrificial layer over theadhesive layer, wherein the carrier and the sacrificial layer are incontact with opposite surfaces of the adhesive layer; formingthrough-vias overlapping the sacrificial layer; placing a device dieover the sacrificial layer; molding the device die in an encapsulatingmaterial; planarizing top surfaces of the device, the through-vias, andthe encapsulating material to form a planar top surface; de-bonding thecarrier by removing the adhesive layer; and removing the sacrificiallayer from a combined structure comprising the device die, thethrough-vias, and the encapsulating material.
 2. The method of claim 1,wherein the forming the sacrificial layer comprises forming ahexamethyldisilance (HMDS) layer.
 3. The method of claim 2, wherein theremoving the sacrificial layer is performed by a same step as thede-bonding the carrier.
 4. The method of claim 1, wherein the formingthe sacrificial layer comprises forming a metal layer or an inorganicdielectric layer.
 5. The method of claim 1, wherein the removing thesacrificial layer comprises etching an entirety of the sacrificiallayer.
 6. The method of claim 4, wherein the forming the sacrificiallayer comprises forming a titanium layer.
 7. The method of claim 4,wherein the forming the sacrificial layer comprises forming an oxidelayer.
 8. The method of claim 1 further comprising: before the formingthe through-vias, forming and patterning a dielectric layer over thesacrificial layer, with portions of the sacrificial layer exposedthrough openings in the dielectric layer; and forming a metal seed layerover the sacrificial layer and plating the through-vias starting fromthe metal seed layer, wherein the metal seed layer extends into theopenings in the dielectric layer.
 9. The method of claim 1, wherein theforming the through-vias comprises: forming a metal seed layer over thesacrificial layer; and plating the through-vias starting from the metalseed layer, wherein an entirety of the metal seed layer is formed as aplanar layer.
 10. The method of claim 1, wherein the sacrificial layeris formed over the adhesive layer after the adhesive layer is formedover the carrier.
 11. A method comprising: forming an adhesive layerover a carrier; forming a sacrificial layer over the adhesive layer;forming a dielectric layer over the sacrificial layer; patterning thedielectric layer to allow portions of the sacrificial layer exposedthrough openings in the dielectric layer; forming a metal seed layerover the sacrificial layer, wherein the metal seed layer extends intothe openings in the dielectric layer; forming through-vias over thesacrificial layer, wherein the through-vias are plated from the metalseed layer; placing a device die over the sacrificial layer; molding andplanarizing the device die and the through-vias; de-bonding the carrierby removing the adhesive layer; and removing the sacrificial layer. 12.The method of claim 11, wherein the forming the sacrificial layercomprises forming an organic layer.
 13. The method of claim 11, whereinthe removing the sacrificial layer is performed by a same step as thede-bonding the carrier.
 14. The method of claim 11, wherein the formingthe sacrificial layer comprises forming a metal layer or an inorganicdielectric layer.
 15. The method of claim 11, wherein in the removingthe sacrificial layer, an entirety of the sacrificial layer is removed.16. The method of claim 11, wherein the sacrificial layer is removedafter the de-bonding the carrier.
 17. The method of claim 11, whereinthe forming the sacrificial layer comprises forming an oxide layer. 18.The method of claim 11, wherein the removing the sacrificial layercomprises etching.
 19. The method of claim 11, wherein the sacrificiallayer is a substantially planar layer.
 20. The method of claim 1,wherein a portion of the sacrificial layer overlaps both a portion ofthe adhesive layer and a portion of the carrier.